RADIATION DEFECTS IN GaP, GaAsP, InGaN LEDs
R. Vernydub, O. Kyrylenko, O. Konoreva, O. Radkevych, D. Stratilat, V. Tartachnyk
Pages: 84–89
DOI: 10.21175/RadProc.2021.16
Abstract |
References | Cite This | Full Text (PDF)
The results of the effect of irradiation by electrons with E = 2 MeV, F =
2.6 · 1016 cm-2 on LEDs grown on the basis of GaP and
GaAsP homojunctions, as well as on InGaN/GaN heterojunction structures with
quantum wells are presented. The consequences of irradiation with γ-quanta
from Со60 from an absorbed dose of 1.5 Mrad are analyzed. It is
revealed that the introduction of radiation defects is accompanied by a
decrease in the glow intensity due to the capture of charge carriers by
deep levels of defects, an increase in the differential resistance, and a
decrease in the reverse currents of p-n junctions. Isochronism annealing of
irradiated samples is multistage and proceeds within the range (20 ÷ 300
°С, for GaP LEDs) and (20 ÷ 450 °С, for GaAsP LEDs). The maximum quantum
output of InGaN LEDs has been 32 %, irradiated with γ-Со60 with
an absorbed dose of 1.5 Mrad – 17 %.
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R. Vernydub, O. Kyrylenko, O. Konoreva, O. Radkevych, D. Stratilat, V. Tartachnyk, "Radiation defects in GaP, GaAsP, InGaN LEDs", RAD Conf. Proc, vol. 5, 2021, pp. 84–89, http://doi.org/10.21175/RadProc.2021.16
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