The results of the effect of irradiation by electrons with E = 2 MeV, F = 2.6 · 10¹⁶ cm^-2 on LEDs grown on the basis of GaP and GaAsP homojunctions, as well as on InGaN/GaN heterojunction structures with quantum wells are presented. The consequences of irradiation with γ-quanta from Со⁶⁰ from an absorbed dose of 1.5 Mrad are analyzed. It is revealed that the introduction of radiation defects is accompanied by a decrease in the glow intensity due to the capture of charge carriers by deep levels of defects, an increase in the differential resistance, and a decrease in the reverse currents of p-n junctions. Isochronism annealing of irradiated samples is multistage and proceeds within the range (20 ÷ 300 °С, for GaP LEDs) and (20 ÷ 450 °С, for GaAsP LEDs). The maximum quantum output of InGaN LEDs has been 32 %, irradiated with γ-Со⁶⁰ with an absorbed dose of 1.5 Mrad – 17 %.

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