Vol. 2, 2017

Radiation Effects


P. K. Skorobogatov, G. G. Davydov, A. A. Pechenkin, D. V. Boychenko

Pages: 159-162

DOI: 10.21175/RadProc.2017.32

The work is devoted to the research of the single and multiple latch-up impact on the subsequent behavior of electrical parameters and operability of modern integrated circuits. The impact of interrupted SEL amount on subsequent behavior of IC is introduced. An approach to the estimation of the maximum time in the latch-up state is formulated to ensure IC’s fault-free operation after SEL.
  1. R. H. Maurer, M. E. Fraeman, M. N. Martin, D. R. Roth, “Harsh Environments: Space Radiation Environment, Effects, and Mitigation,” Johns Hopkins APL Technical Digest, vol. 28, no. 1, 2008.
    Retrieved from: http://www.jhuapl.edu/techdigest/TD/td2801/Maurer.pdf
    Retrieved on: Jan. 13, 2017.
  2. S. Duzellier, G. Hopkinson, J. C. RodriguezRadiation effects analysis (subdivided into total ionising dose, displacement, damage, and single-event effects),” presented at the RADECS-2003 short course, Noordwijk, The Netherlands, 2003.
  3. K. LaBel, L. Cohn, “Radiation Testing and Evaluation Issues for Modern Integrated Circuits,” in Proc. RADECS-2005, Cap d`Agde, France, 2005.
    Retrieved from: https://radhome.gsfc.nasa.gov/radhome/papers/radecs05_sc.pdf
    Retrieved on: Feb. 3, 2017.
  4. H. N. Becker, T. F. Miyahira, A. H. Johnston, “Latent Damage From Single-Event Latchup,” in Proc. Single Event Effects Symposium, Manhattan Beach (CA), USA, 2002.
    Retrieved from: https://trs.jpl.nasa.gov/bitstream/handle/2014/8510/02-1001.pdf?sequence=1&isAllowed=y
    Retrieved on: Feb. 5, 2017.
  5. S. H. Voldman, Latchup, 1st ed., Chichester, UK: J. Wiley and Sons, 2007.
    DOI: 10.1002/9780470516171
  6. Hi-Rel Latchup Current Limiter, 3D plus, Buc, France, 2013.
    Retrieved from: http://www.3d-plus.com/data/doc/products/references/3dfp_0608_5.pdf
    Retrieved on: Feb. 5, 2017.
  7. A. A. Pechenkin, “SEE radiation hardness assurance procedure of electronic components and systems,” in RADECS-2015 short course, Moscow, Russia, 2015, PXI Advisor - National Instruments, National Instruments, Austin (TX), USA.
  8. Retrieved from: http://ohm.ni.com/advisors/pxi/pages/common/intro.xhtml
    Retrieved on: Feb. 3, 2017.